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| BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BO13J4G END-LOOK PACKAGE LIGHT EMITTING DIODE Features: 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package. 3. Peak wavelength p=850nm. 4. Good spectral matching to si-photodetector. 5. Radiant angle: 20 6. Lens Appearance: Water Clear. 7. This product doesn't contain restriction substance, comply ROHS standard Package Dimensions: 5.0(.197) 8.62(.339) 1.0(.039) 1.5(.059) MAX. 23.4(.921) MIN. 5.7(.224) 0.5(.020) SQ.TYP. Anode Cathode 2.54(.100) NOM. 1.00(.039) MIN. NOTES: Applications: 1. Remote Control. 2. Automatic Control System. 1.All dimensions are in millimeters (inches). 2.Tolerance is 0.25mm (0.01") unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. Absolute Maximum Ratings(Ta=25) Parameter Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature *1 *1 Symbol Pd IF IFP VR Topr Tstg Tsol Rating 100 100 1.0 5 -45~85 -45~100 260(for 5 seconds) Unit mW mA A V - Condition for is IFP pulse of 1/10 duty and 0.1 msec width. Rev:2.1 Page1 3 Page1 of of 2 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BO13J4G Optical- Electrical Characteristics (@TA=25) Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Line Half- Width Viewing Angle Symbol Ie VF IR p 21/2 Test Conditions IF=50mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Min 45.31 TYP 128.5 1.5 850 50 20 Max 1.8 10 Unit mW/sr V A nm nm deg Typical Optical-Electrical Characteristic Curves Fig.1 Spectral Dlstrbution 1.0 Fig.2 Forward Current Vs Ambient Temperature 120 Relative Radiant Intensity Forward Current IF (mA) 100 80 0.5 60 40 20 0 -40 -20 0 20 40 60 80 100 0 750 850 950 (nm) Wavelength Ambient Temperature Fig.4 Relative Radiant Intensity Vs Ambient Tembeb Ature Output Power To Value @50mA 3.0 Fig.3 Forward Current Vs (mA) 100 80 2.5 Forward Current 2.0 60 1.5 40 1.0 20 0.5 0 -40 0 0 1.0 2.0 3.0 4.0 (V) -20 0 20 40 60 (C) Forward Voltage Fig.5 Relative Radiant Intensity Vs Forward Current 4.0 Ambient Temperature Fig.6 Radiation Diagram 0 10 20 30 Output Power Relative To Value At @ 50mA 3.0 Relative Radiant Intensity 1.0 40 2.0 0.9 0.8 50 60 70 1.0 0.7 80 90 0.5 0.3 0.1 0.2 0.4 0.6 0 0 20 40 60 80 100 (mA) Forward Current Rev:2.1 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BO13J4G Tapping and packaging specifications(Units: mm) Packaging Bag Dimensions Notes: 1500pcs per bag, 5Kpcs per box. 2All dimensions are in millimeters(inches). 3Specifications are subject to change without notice. Rev:2.1 Page3 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BO13J4G Infrared Emitting Diode Specification Commodity: Infrared emitting diode Intensity Bin Limits (At 50mA) BIN CODE 15 16 17 18 Min.(mW/sr) 32.36 45.31 63.43 88.80 Max.( (mW/sr) 61.30 85.82 120.15 168.21 |
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